Growth of water-insoluble rutile GeO<sub>2</sub> thin films on (001) TiO<sub>2</sub> substrates with graded Ge<sub> x </sub>Sn<sub>1−x </sub>O<sub>2</sub> buffer layers
Kazuki Shimazoe, Temma Ogawa, Hiroyuki Nishinaka
Abstract
Abstract Rutile GeO 2 (r-GeO 2 ) is an ultrawide bandgap semiconductor with the potential for ambipolar doping and bulk single-crystal growth. In this study, we investigated r-GeO 2 thin films grown on (001) TiO 2 substrates with graded Ge x Sn 1− x O 2 buffer layers. GeO 2 grown on bare TiO 2 substrates via mist chemical vapor deposition exhibited water-soluble amorphous and/or α-quartz phases alongside the rutile phase. In contrast, the insertion of graded Ge x Sn 1− x O 2 buffer layers on the TiO 2 substrate allowed the growth of single-phase water-insoluble r-GeO 2 thin films. This study contributes to the development of water-insoluble r-GeO 2 thin films for various applications.
Topics & Concepts
RutileMaterials scienceThin filmAnalytical Chemistry (journal)MineralogyCrystallographyChemical engineeringChemistryNanotechnologyEnvironmental chemistryEngineeringGa2O3 and related materialsSemiconductor materials and devicesTransition Metal Oxide Nanomaterials