Reliability of the hybrid bonding level using submicrometric bonding pads
S. Lhostis, B. Ayoub, H. Frémont, S. Moreau, Jean‐Gabriel Mattei, P. Lamontagne, A. Tournier
Topics & Concepts
Materials scienceInterconnectionTime-dependent gate oxide breakdownTemperature cyclingStackingReliability (semiconductor)OxideStress (linguistics)Ionic bondingOptoelectronicsElectronic engineeringThermalGate dielectricComposite materialElectrical engineeringComputer scienceMetallurgyTransistorVoltageEngineeringChemistryMeteorologyQuantum mechanicsPower (physics)PhysicsOrganic chemistryLinguisticsIonPhilosophyComputer network3D IC and TSV technologiesElectronic Packaging and Soldering TechnologiesCopper Interconnects and Reliability