Straining and Tuning Atomic Layer Nanoelectromechanical Resonators via Comb‐Drive MEMS Actuators
Yong Xie, Jaesung Lee, Yanan Wang, Philip X.‐L. Feng
Abstract
Abstract Broad frequency tuning is an essential attribute desired in resonant nano/microelectromechanical systems (NEMS/MEMS) and their many applications. Endowed with ultrahigh intrinsic strain limits, combined with other unconventional properties, atomically thin 2D crystalline materials are excellent candidates for building highly tunable resonant NEMS. Here a heterogeneous integration approach is demonstrated to enable on‐chip, continuous, and broad frequency tuning in 2D NEMS resonators by directly controlling strain via voltage‐controlled silicon‐on‐insulator (SOI) comb‐drive MEMS actuators. By varying the comb‐drive actuation voltage, resonance frequency of the 2D NEMS can be tuned as large as 75% continuously with precise control. The comb‐drive actuation‐enabled direct straining and tuning also yield quality ( Q ) factor boost up to twofold. It is validated that this technique is readily applicable to straining and tuning representative 2D NEMS in various leading materials: graphene, molybdenum disulfide (MoS 2 ), and hexagonal boron nitride (h‐BN). This study demonstrates that additively integrating 2D resonators atop mainstream SOI MEMS enables a versatile platform, and opens new possibilities for voltage control and broad tuning of 2D NEMS on chip.