Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering
Pai-Ying Liao, Mengwei Si, Zhuocheng Zhang, Zehao Lin, Peide D. Ye
Abstract
In this work, we demonstrate the record high maximum drain current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{{\mathrm {D}}}$ </tex-math></inline-formula> ) of 2 A/mm of top-gate (TG) indium oxide (In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) transistors. The scaled and atomic-layer-deposited (ALD) In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> transistors have channel length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{{\mathrm {ch}}}$ </tex-math></inline-formula> ) down to 40 nm and channel thickness ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{{\mathrm {ch}}}$ </tex-math></inline-formula> ) down to 1.3 nm. Besides, the thermal budget of the whole material formation and device fabrication process is as low as 225 °C, making it compatible with back-end-of-line (BEOL) technologies by a huge margin. On the other hand, highly resistive silicon is utilized to serve as a desired high thermal conducting substrate to dissipate the generated heat efficiently as a larger current is conducted under a larger voltage bias. It greatly alleviates the self-heating effect (SHE) and allows an approximately 100% higher drain current. Quantitative studies of the SHE and channel temperature at ON-state with SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si and highly resistive silicon substrates are also presented.