Litcius/Paper detail

Forming-free bipolar resistive switching characteristics in Al/Mn3O4/FTO RRAM device

Vidit Pandey, Adiba Adiba, Tufail Ahmad, Priyanka Nehla, Sandeep Munjal

2022Journal of Physics and Chemistry of Solids27 citationsDOI

Topics & Concepts

Resistive random-access memoryThermal conductionMaterials scienceOptoelectronicsOhmic contactResistive touchscreenTinTemperature coefficientVoltageElectrical engineeringNanotechnologyComposite materialMetallurgyEngineeringLayer (electronics)Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials
Forming-free bipolar resistive switching characteristics in Al/Mn3O4/FTO RRAM device | Litcius