Gate-bias instability of few-layer WSe<sub>2</sub> field effect transistors
Shaofeng Wen, Changyong Lan, Chun Li, Sihan Zhou, Tianying He, Rui Zhang, Ruisen Zou, Hao Hu, Yi Yin, Yong Liu
Abstract
The performance of the few-layer p-type WSe<sub>2</sub>-based field effect transistor is sensitive to the environment and gate bias stress.
Topics & Concepts
Field-effect transistorLayer (electronics)InstabilityOptoelectronicsMaterials scienceTransistorNegative-bias temperature instabilityAnalytical Chemistry (journal)ChemistryNanotechnologyThreshold voltagePhysicsChromatographyVoltageQuantum mechanics2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications