A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying <i>V<sub>G</sub>/V<sub>D</sub> </i> Stress in GAA Nanosheet PFETs
Nilotpal Choudhury, Souvik Mahapatra
Abstract
Gate-all-around stacked nano-sheet (GAA-SNS) p-channel field effect transistors (FETs) having varying sheet widths are utilized for ultrafast measurements ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10 ~\mu \text{s}$ </tex-math></inline-formula> delay) of negative bias temperature instability (NBTI) and hot carrier degradation (HCD). The BTI analysis tool (BAT) framework is used to analyze the pure NBTI data at multiple <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> . BAT is suitably modified to estimate the NBTI contribution in the presence of self-heating (SH) effect at multiple <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{D}$ </tex-math></inline-formula> under HCD stress. The pure HCD kinetics is estimated using both empirical and physical models; a vertical field and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> enhanced dominant energy concept is used for the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G}, {V}_{D}$ </tex-math></inline-formula> , and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> dependence. Projected degradation at end-of-life (EOL) and under multiple <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{G} / {V}_{D}$ </tex-math></inline-formula> conditions is estimated.