Design of ohmic contacts between Janus MoSSe and two-dimensional metals
Ning Zhao, Shubham Tyagi, Udo Schwingenschlögl
Abstract
Abstract Two-dimensional semiconductors are considered as channel materials for field-effect transistors to overcome short-channel effects and reduce the device size. As the contacts to the metallic electrodes are decisive for the device performance, we study the electronic properties of contacts between Janus MoSSe and various two-dimensional metals. We demonstrate that weak interactions at these van der Waals contacts suppress Fermi level pinning and show that ohmic contacts can be formed for both terminations of Janus MoSSe, generating favorable transport characteristics.
Topics & Concepts
JanusOhmic contactMaterials sciencevan der Waals forceSemiconductorOptoelectronicsField-effect transistorCondensed matter physicsElectrodeTransistorNanotechnologyEngineering physicsElectrical engineeringPhysicsVoltageLayer (electronics)MoleculeEngineeringQuantum mechanics2D Materials and ApplicationsMXene and MAX Phase MaterialsElectronic and Structural Properties of Oxides