Flexible Solid-Electrolyte-Gated-Dielectric Carbon Nanotube Thin Film Transistors and Integrated Circuits with the Recorded Radiation Tolerance and Reparability
Nianjie Zhang, Jiaqi Li, Nianzi Sui, Kaixiang Kang, Meng Deng, Shuangshuang Shao, Weibing Gu, Lijuan Liang, Min Li, Jianwen Zhao
Abstract
Radiation-tolerance and repairable flexible transistors and integrated circuits (ICs) with low power consumption have become hot topics due to their wide applications in outer space, nuclear power plants, and X-ray imaging. Here, we designed and developed novel flexible semiconducting single-walled carbon nanotube (sc-SWCNT) thin-film transistors (TFTs) and ICs. Sc-SWCNT solid-electrolyte-gate dielectric (SEGD) TFTs showcase symmetric ambipolar characteristics with flat-band voltages (V FB ) of ∼0 V, high I ON /I OFF ratios (>10 5 ), and the recorded irradiation resistance (up to 22 Mrad). Moreover, flexible sc-SWCNT ICs, including CMOS-like inverters and NAND and NOR logic gates, have excellent operating characteristics with low power consumption (≤8.4 pW) and excellent irradiation resistance. Significantly, sc-SWCNT SEGD TFTs and ICs after radiation with a total irradiation dose (TID) ≥ 11 Mrad can be repaired after thermal heating at 100 °C. These outstanding characteristics are attributed to the designed device structures and key core materials including SEGD and sc-SWCNT.