Vertically stacked GaN/WX<sub>2</sub> (X = S, Se, Te) heterostructures for photocatalysts and photoelectronic devices
Dahua Ren, Yunhai Li, Wenqi Xiong
Abstract
(a) Absorption spectrum of GaN/WX 2 (X = S, Se, Te) heterostructures. (b) Schematic plot of the migration of photogenerated electrons and holes at the GaN/WS 2 interface. (c) Band-edge alignments of GaN/WX 2 heterostructures.
Topics & Concepts
HeterojunctionOptoelectronicsMaterials scienceNanotechnology2D Materials and ApplicationsMXene and MAX Phase MaterialsGa2O3 and related materials