HVPE Growth and Characterization of ε-Ga<sub>2</sub>O<sub>3</sub> Films on Various Substrates
В. И. Николаев, С. И. Степанов, А. И. Печников, Sevastian Shapenkov, M. P. Scheglov, A. V. Chikiryaka, О. Ф. Вывенко
Abstract
In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 °C–600 °C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mfenced close=")" open="(" separators=""> <mml:mrow> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mrow> <mml:mo stretchy="true">¯</mml:mo> </mml:mrow> </mml:mover> <mml:mn>01</mml:mn> </mml:mrow> </mml:mfenced> </mml:math> bulk β -Ga 2 O 3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga 2 O 3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga 2 O 3 :Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.