Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
Jan Ruschel, Johannes Glaab, Norman Susilo, Sylvia Hagedorn, Sebastian Walde, Eviathar Ziffer, Hyun Kyong Cho, Neysha Lobo‐Ploch, Tim Wernicke, M. Weyers, S. Einfeldt, Michael Kneissl
Abstract
The impact of different AlN/sapphire template technologies [i.e., planar, epitaxial lateral overgrown (ELO), and high temperature annealed sputtered ELO] is studied with respect to the operation-induced degradation of 265 nm UVC LEDs. UVC LEDs with identical heterostructures were grown on templates providing different threading dislocation densities in the range of 0.8 × 109 cm−2 to 5.8 × 109 cm−2. A long-term stress experiment was performed on batches of LEDs, which were operated at a direct current of 200 mA corresponding to a current density of 60 A/cm2 and at a heat sink temperature of 20 °C. The UVC LEDs on templates with lower threading dislocation densities were found to provide a higher optical power and to degrade slower during 2000 h of operation. The experiment demonstrates an extrapolated L70 lifetime of more than 10 000 h for the high temperature annealed sputtered ELO technology. The results suggest that degradation is caused by operation-induced activation of defects whose density scales with the dislocation density.