Multiscale Modeling of Al<sub>0.7</sub>Sc<sub>0.3</sub>N-based FeRAM: the Steep Switching, Leakage and Selector-free Array
C. Liu, Qiang Wang, Wanting Yang, Tiancheng Cao, Lequn Chen, M. Li, F. Liu, Desmond K. Loke, Jian Kang, Yao Zhu
Abstract
In this work, by experiments and material calculations, the steep polarization switching and the leakage in ferroelectric Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf> Sc <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf> N are investigated. The material calculations suggest that the tight distribution of the coercive field is attributed to highly uniform material with well-aligned domains. The electron emission and hopping assisted by N vacancies in the Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf> Sc <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf> N layer dominate the leakage current. For the first time, a circuit model of Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf> Sc <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf> N -based FeRAM, reflecting the frequency dependent coercive field and leakage, is established to project the behavior of the selector- free array, and analyzing the dependence of the latency and the read window on the device area, line resistance and the array size.