Design study of the gate-all-around silicon nanosheet MOSFETs
Yongwoo Lee, Geon-Hwi Park, Bongsik Choi, Jinsu Yoon, Hyo-Jin Kim, Dae Hwan Kim, Dong Myong Kim, Min‐Ho Kang, Sung‐Jin Choi
Abstract
Abstract The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures provide high drive currents due to wide effective channel width ( W eff ) while maintaining short-channel control. In this paper, we fabricate a GAA SiNS MOSFET fully surrounded by a gate with a gate length ( L G ) of 22 nm, a SiNS width ( W NS ) of 23 nm, and SiNS thickness ( T NS ) of 6 nm. In addition, the fabricated GAA SiNS MOSFETs were evaluated for electrostatic characteristics and short-channel effects (SCEs) according to various channel length and width dimensions. We confirmed that the GAA SiNS MOSFET showed similar short-channel controllability regardless of W NS due to the extremely thin T NS . In addition, we analyzed SCEs of GAA SiNS MOSFETs with different T NS through simulation.