Counterintuitive gate dependence of weak antilocalization in bilayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>graphene</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mi mathvariant="normal">WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> heterostructures
Julia Amann, Tobias Völkl, Tobias Rockinger, Denis Kochan, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Dieter Weiss, Jonathan Eroms
Abstract
Theory recently predicted that the strength of spin-orbit coupling in bilayer graphene, touching on one side a transition metal dichalcogenide layer such as WSe${}_{2}$, can be tuned easily by moderate gate voltages. Here, the authors show in both theory and experiment that, while spin-orbit splitting of the band structure is a monotonic function of the applied electric field, the visibility of weak antilocalization, a measure of the spin-orbit coupling strength, follows a largely opposite, and nonmonotonic trend.
Topics & Concepts
Condensed matter physicsGrapheneSpin–orbit interactionHeterojunctionZeeman effectPhysicsElectric fieldBilayer grapheneMaterials scienceQuantum mechanicsMagnetic fieldGraphene research and applications2D Materials and ApplicationsTopological Materials and Phenomena