Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
Zhichao Chen, Lie Cai, Kai Niu, Chao-Zhi Xu, Haoxiang Lin, Pengpeng Ren, Dong Sun, Haifeng Lin
Topics & Concepts
Materials scienceTransconductanceHigh-electron-mobility transistorOptoelectronicsBarrier layerThreshold voltageSaturation currentBreakdown voltageLayer (electronics)Gallium nitrideSaturation (graph theory)TransistorVoltageElectrical engineeringNanotechnologyCombinatoricsMathematicsEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSilicon Carbide Semiconductor Technologies