Ferroelectric field effect transistors: Progress and perspective
Jae Young Kim, Min‐Ju Choi, Ho Won Jang
Abstract
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration. Since the discovery of hafnium–zirconium oxide (HZO) with high ferroelectricity (even at a thickness of several nanometers) that can be fabricated by a complementary metal–oxide–semiconductor-compatible process, FeFETs have emerged as devices with great potential. In this article, the basic principles of the FeFET and the design strategies for state-of-the-art FeFETs will be discussed. FeFETs using Pb(ZrxTi1−x)O3, polyvinylidene fluoride, HZO, and two-dimensional materials are emphasized. FeFETs, ferroelectric semiconductor field effect transistors, and metal–ferroelectric–insulator–semiconductor structures to which those materials can be applied are introduced, and their exotic performances are investigated. Finally, the limitations of these devices’ current performance and the potential of these materials are presented.