Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology
Joost Romijn, Sten Vollebregt, Luke M. Middelburg, Brahim El Mansouri, H.W. van Zeijl, Alexander May, Tobias Erlbacher, Guoqi Zhang, P.M. Sarro
Abstract
The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.