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High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching

Hanzhen Li, Minhan Mi, Can Gong, Pengfei Wang, Yuwei Zhou, Xinyi Wen, S. Y. Wen, Xiaohua Ma

2024IEEE Electron Device Letters11 citationsDOI

Topics & Concepts

High-electron-mobility transistorOptoelectronicsEtching (microfabrication)Materials scienceWide-bandgap semiconductorGallium nitrideExtremely high frequencyVoltageTransistorElectrical engineeringNanotechnologyComputer scienceLayer (electronics)EngineeringTelecommunicationsGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignAcoustic Wave Resonator Technologies
High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching | Litcius