Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method
Yiming Qu, Junkang Li, Mengwei Si, Xiao Lyu, Peide D. Ye
Abstract
In this work, the conductance method with an optimized circuit model is established to investigate the trapped charges at the ferroelectric/dielectric (FE/DE) interface. The density of interface states is quantitatively characterized to be ~4 x 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> · eV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . And the injection and accumulation of these enormous interfacial charges play a key role in the operation of the FE/DE stack. The proposed measurement technique provides a comprehensive understanding of the FE/DE stack as well as some new insights of negative capacitance effect and ferroelectric field-effect transistor device operations.