Process Controlled Ruthenium on 2D Engineered V‐MXene via Atomic Layer Deposition for Human Healthcare Monitoring
Debananda Mohapatra, Yujin Shin, Mohd Zahid Ansari, Youn‐Hye Kim, Ye Jin Park, Taehoon Cheon, Haekyoung Kim, Jung Woo Lee, Soo‐Hyun Kim
Abstract
Abstract In searching for unique and unexplored 2D materials, the authors try to investigate for the very first time the use of delaminated V‐MXene coupled with precious metal ruthenium (Ru) through atomic layer deposition (ALD) for various contact and noncontact mode of real‐time temperature sensing applications at the human–machine interface. The novel delaminated V‐MXene (DM‐V 2 CT x ) engineered ruthenium‐ALD (Ru‐ALD) temperature sensor demonstrates a competitive sensing performance of 1.11% °C −1 as of only V‐MXene of 0.42% °C −1 . A nearly threefold increase in sensing and reversibility performance linked to the highly ordered few‐layered V‐MXene and selective, well‐controlled Ru atomic doping by ALD for the successful formation of Ru@DM‐V 2 CT X heterostructure. The advanced heterostructure formation, the mechanism, and the role of Ru have been comprehensively investigated by ultra‐high‐resolution transmission/scanning transmission electron microscopies coupled with next‐generation spherical aberration correction technology and fast, accurate elemental mapping quantifications, also by ultraviolet photoelectron spectroscopy. To the knowledge, this work is the first to use the novel, optimally processed V‐MXene over conventionally used Ti‐MXene and its surface‐internal structure engineering by Ru‐ALD process‐based temperature‐sensing devices function and operational demonstrations. The current work could potentially motivate the development of multifunctional, future, next‐generation, safe, personal healthcare electronic devices by the industrially scalable ALD technique.