XPS study of a selective GaN etching process using self-limiting cyclic approach for power devices application
Frédéric Le Roux, N. Possémé, Pauline Burtin, S. Barnola, Alphonse Torres
Topics & Concepts
Etching (microfabrication)X-ray photoelectron spectroscopyHigh-electron-mobility transistorMaterials sciencePlasma etchingOptoelectronicsReactive-ion etchingDry etchingTransistorLayer (electronics)PlasmaStoichiometryNanotechnologyAnalytical Chemistry (journal)Chemical engineeringChemistryVoltageElectrical engineeringEngineeringQuantum mechanicsPhysicsOrganic chemistryChromatographySemiconductor materials and devicesGaN-based semiconductor devices and materialsZnO doping and properties