Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides
Areej Aljarb, Jiacheng Min, Mariam Hakami, Jui‐Han Fu, Rehab Albaridy, Yi Wan, Sergei Lopatin, Dimitrios Kaltsas, Dipti R. Naphade, Emre Yengel, Mohamed Nejib Hedhili, Roaa Sait, Abdul‐Hamid Emwas, Arwa T. Kutbee, Merfat M. Alsabban, Kuo‐Wei Huang, Kaimin Shih, Leonidas Tsetseris, Thomas D. Anthopoulos, Vincent Tung, Lain‐Jong Li
Abstract
Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.