Determining the potential barrier presented by the interfacial layer from the temperature induced I–V characteristics in Al/p-Si Structure with native oxide layer
Muhammed Can ÖZDEMİR, Ömer Sevgi̇li̇, İkram Orak, A. Türüt
Topics & Concepts
Materials scienceDiodeAtmospheric temperature rangeOxideAnalytical Chemistry (journal)Quantum tunnellingSemiconductorCondensed matter physicsDopingThermodynamicsPhysicsOptoelectronicsChemistryChromatographyMetallurgySemiconductor materials and interfacesIntegrated Circuits and Semiconductor Failure AnalysisSemiconductor materials and devices