Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb<sub>2</sub>Te<sub>3</sub> Topological Insulator Chemically Grown on Silicon
Emanuele Longo, Matteo Belli, Mario Alia, Martino Rimoldi, Raimondo Cecchini, Massimo Longo, Claudia Wiemer, Lorenzo Locatelli, Polychronis Tsipas, A. Dimoulas, G. Gubbiotti, M. Fanciulli, R. Mantovan
Abstract
Abstract Spin‐charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort toward the development of fast and ultra‐low power devices for future information and communication technology. A large spin‐to‐charge (S2C) conversion efficiency in Au/Co/Au/Sb 2 Te 3 /Si(111) heterostructures based on Sb 2 Te 3 TIs grown by metal–organic chemical vapor deposition on 4″ Si(111) substrates is reported. By conducting room temperature spin pumping ferromagnetic resonance, a 250% enhanced charge current due to spin pumping in the Sb 2 Te 3 ‐containing system is measured when compared to the reference Au/Co/Au/Si(111). The corresponding inverse Edelstein effect length λ IEE ranges from 0.28 to 0.61 nm, depending on the adopted methodological analysis, with the upper value being so far the largest observed for the second generation of 3D chalcogenide‐based TIs. These results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing S2C conversion, thus marking a milestone toward future technology‐transfer.