Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles
Manzhang Xu, Hongjia Ji, Lu Zheng, Weiwei Li, Jing Wang, Hanxin Wang, Lei Luo, Qianbo Lu, Xuetao Gan, Zheng Liu, Xuewen Wang, Wei Huang
Abstract
Abstract Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area and high-quality TB-TMDCs with wide twist angles would be significant for exploring twist angle-dependent physics and applications, but remains challenging to implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy for directly synthesizing TB-MoS 2 with twist angles from 0° to 120°. The twist angles-dependent Moiré periodicity can be clearly observed, and the interlayer coupling shows a strong relationship to the twist angles. Moreover, the yield of TB-MoS 2 in bilayer MoS 2 and density of TB-MoS 2 are significantly improved to 17.2% and 28.9 pieces/mm 2 by tailoring gas flow rate and molar ratio of NaCl to MoO 3 . The proposed reconfiguring nucleation approach opens an avenue for the precise growth of TB-TMDCs for both fundamental research and practical applications.