Highly Reliable Cell Characteristics with CSOB(Channel-hole Sidewall ONO Butting) Scheme for 7th Generation 3D-NAND
Jin-Kyu Kang, Jaeduk Lee, Yong-Sik Yim, Sejun Park, Hyun‐Suk Kim, Eun Suk Cho, Taehun Kim, Jung Hoon Lee, Joon Kim, Raeyoung Lee, Junhee Lim, Sung‐Hoi Hur, Su Jin Ahn, Jaihyuk Song
Abstract
Architecture change from BCS (Body Contact Spacer) scheme to CSOB (Channel-hole Sidewall ONO Butting) scheme for the 7th-generation 3D-NAND flash memory is discussed, which has been driven to adopt COP (Cell Over Peripheral circuits) scheme. Device considerations, such as cell-to-cell interference, cell current, and charge loss in the 7th-generation 3D-NAND are reviewed and solutions are suggested that lead to the world smallest unit cell volume in flash memory.
Topics & Concepts
Flash (photography)NAND gateMemory cellFlash memoryInterference (communication)Channel (broadcasting)Non-volatile memoryScheme (mathematics)Electronic engineeringComputer scienceLogic gateOptoelectronicsMaterials scienceElectrical engineeringComputer hardwarePhysicsEngineeringTransistorTelecommunicationsOpticsMathematicsVoltageMathematical analysisAdvanced Data Storage TechnologiesSemiconductor materials and devicesCellular Automata and Applications