A single-photon source based on topological bulk cavity
Xinrui Mao, Weijie Ji, Shaolei Wang, Hanqing Liu, Bang Wu, Xu-Jie Wang, Li Liu, Lai Zhou, Haiqiao Ni, Zhichuan Niu, Zhiliang Yuan
Abstract
Abstract Topological photonics offers the potential to develop quantum light sources with inherent robustness against structural disorders. To date, topologically protected edge or corner states have been investigated for this purpose. Here, for the first time, we exploit a topological bulk state with vertical directionality to enhance the light emission from a single semiconductor quantum dot (QD). An irregular ‘Q’-shaped cavity is applied for establishing topological robustness. We experimentally demonstrate a 1.6-fold Purcell enhancement of single-photon emission in the topological bulk cavity, with tolerance to the emission wavelength or the positioning of the coupled QD. Simulations indicate that such a QD-cavity coupling system can retain a Purcell factor exceeding 1.6 under a broad spectral detuning range of 8.6 nm or a coverage area of 2.5 μm 2 . Furthermore, the optimized cavity structure integrated with a reflector predicts a high single-photon extraction efficiency up to 92%. Our results offer a novel approach to develop topologically protected quantum light sources with high extraction efficiency and robust QD-cavity interaction against irregular cavity boundaries.