Tunability of the electronic structure of GaN third generation semiconductor for enhanced band gap: The influence of B concentration
Jiaxin Zhu, Yong Pan
Topics & Concepts
SemiconductorOptoelectronicsBand gapMaterials scienceWide-bandgap semiconductorThird generationTelecommunicationsComputer scienceGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties