Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers
Weideng Sun, Yike Zhang, Kaihua Cao, Shiyang Lu, Ao Du, Haoliang Huang, Sen Zhang, Chaoqun Hu, Ce Feng, Wenhui Liang, Quan Liu, Shu Mi, Jianwang Cai, Yalin Lu, Weisheng Zhao, Yonggang Zhao
Abstract
Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non–in-plane magnetic anisotropy.