Review of 2D group VA material-based heterostructures
Ailun Zhao, Hui Li, Xuejuan Hu, Cong Wang, Han Zhang, Jianguo Lu, Shuangchen Ruan, Y. J. Zeng
Abstract
Abstract The isolation of black phosphorus (BP) and extraordinary performance of the BP field-effect transistor have led to BP offering remarkable properties in the two-dimensional (2D) family. Along with BP, other group VA element materials have been demonstrated to possess superior electronic and optical properties. However, numerous challenges remain to be overcome in their practical applications. Heterostructures play a vital role in modern semiconductors, and 2D group VA materials provide the opportunity to fabricate novel heterostructures that are combined by van der Waals forces. Previous theoretical and experimental studies have indicated that constructing a heterostructure is a promising strategy to conquer the obstacles and boost the development of 2D group VA materials. In this paper, we summarize the recent progress in 2D group VA material-based heterostructures. Firstly, the crystal structures and fundamental electrical properties of 2D group VA materials are introduced. Thereafter, various heterostructures based on group VA materials are discussed. Finally, conclusions and the outlook on emerging group VA heterostructures are presented.