Topological quantum phase transitions driven by a displacement field in twisted <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>MoTe</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> bilayers
P. A. Sharma, Yang Peng, D. N. Sheng
Abstract
The Chern bands in twisted MoTe${}_{2}$ semiconductor bilayers host fascinating quantum effects, including the fractional quantum anomalous Hall (FQAH) state at a zero magnetic field. This study explores the stability of 1/3 and 2/3 FQAH states under intermediate values of an externally applied out-of-plane electric displacement field, where the single-particle band topology remains unchanged. By demonstrating the nontrivial effects of electric fields on partially filled topological bands, the authors map a rich topological quantum phase diagram as a function of twist angles and displacement fields.
Topics & Concepts
Displacement (psychology)Phase (matter)Field (mathematics)PhysicsTopology (electrical circuits)AlgorithmComputer scienceMathematical physicsMathematicsCombinatoricsQuantum mechanicsPure mathematicsPsychologyPsychotherapistTopological Materials and Phenomena2D Materials and ApplicationsGraphene research and applications