Tunable properties of excitons in double monolayer semiconductor heterostructures
Luiz G. M. Tenório, T. A. S. Pereira, K. Mohseni, T. Frederico, M. R. Hadizadeh, D. R. da Costa, A. J. Chaves
Abstract
We studied the exciton properties in double layers of transition metal dichalcogenides (TMDs) with a dielectric spacer between the layers. We developed a method based on an expansion of Chebyshev polynomials to solve the Wannier equation for the exciton. Corrections to the quasiparticle bandgap due to the dielectric environment were also included via the exchange self-energy calculated within a continuum model. We systematically investigated hetero double-layer systems for TMDs with chemical compounds $\mathit{MX}{}_{2}$, showing the dependence of the inter- and intralayer excitons binding energies as a function of the spacer width and the dielectric constant. Moreover, we discussed how the exciton energy and its wave function, which includes the effects of the changing bandgap, depend on the geometric system setup.