Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors
Fadila Serdouk, Abdelmalek Boumali, Abdenacer Makhlouf, M.L. Benkhedi
Abstract
This paper is devoted to investigating the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. For this, we at first modified the multi–trapping model (MTM) of charge carriers in amorphous semiconductors from time-of-flight (TOF) transient photo-current in the framework of the q-derivative formalism, and then, we have constructed, our simulated current by using a method based on the Laplace method. This method is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion.
Topics & Concepts
Laplace transformTrappingSemiconductorAmorphous semiconductorsCharge carrierTime of flightAmorphous solidMaterials scienceFormalism (music)Transient (computer programming)Current (fluid)Charge (physics)Computational physicsMolecular physicsCondensed matter physicsOptoelectronicsPhysicsComputer scienceOpticsChemistryQuantum mechanicsThermodynamicsMathematical analysisMathematicsSiliconOrganic chemistryArtBiologyMusicalEcologyVisual artsOperating systemAdvanced Fiber Laser TechnologiesThin-Film Transistor TechnologiesOptical properties and cooling technologies in crystalline materials