Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In<sub>2</sub>O<sub>3</sub> Dual-Gate Transistor
Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Sunbin Deng, Gihun Choe, Asif Islam Khan, Shimeng Yu, Suman Datta
Abstract
We investigate both hot carrier induced degradation (HCD) and positive bias stress instability (PBTI) in back-end-of-the-line (BEOL) compatible tungsten-doped In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> (IWO) dual-gate field effect transistor (DG-FET) with scaled- EOT(1.18nm) gate stack. The DG-FET shows simultaneous improvement in threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> ) stability and enhancement in device performance. The DG-FET exhibits 11mV V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> -shift under 4.24 MV/cm oxide field (Eox=Voverdrive/EOT) stress for 1Ks, while exhibiting drive current gain of 3x over the back-gate (BG) FET. This makes the IWO DG-FET a viable BEOL transistor candidate for enabling next generation monolithic 3D (M3D) ICs.