Recent Advances in Si-Compatible Nanostructured Photodetectors
Rahaf M. H. Douhan, Kirill A. Lozovoy, А. П. Коханенко, Hazem Deeb, Vladimir V. Dirko, Kristina I. Khomyakova
Abstract
In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the various designs, photodetectors with quantum wells, quantum dots, and quantum wires are highlighted. Such nanostructures have a number of unique properties, that made them striking to scientists’ attention and device applications. Since silicon is the dominating semiconductor material in the electronic industry over the past decades, and as germanium and tin nanostructures are very compatible with silicon, the combination of these factors makes them the promising candidate to use in future technologies.