Tunable electronic properties and Schottky barrier in a graphene/WSe<sub>2</sub> heterostructure under out-of-plane strain and an electric field
Rui Zhang, Guoqiang Hao, Xiaojun Ye, Shang‐Peng Gao, Hongbo Li
Abstract
Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge.
Topics & Concepts
HeterojunctionSchottky barrierOhmic contactGrapheneMaterials scienceCondensed matter physicsvan der Waals forceMonolayerElectric fieldSchottky diodeField-effect transistorOptoelectronicsNanotechnologyTransistorChemistryPhysicsMoleculeDiodeVoltageLayer (electronics)Organic chemistryQuantum mechanics2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications