Influence of Deposition Potential on Electrodeposited Bismuth–Copper Oxide Electrodes for Asymmetric Supercapacitor
Rushikesh G. Bobade, Niteen B. Dabke, Shoyebmohamad F. Shaikh, Abdullah M. Al‐Enizi, Bidhan Pandit, B. J. Lokhande, R.C. Ambare
Abstract
Abstract The modern research reported the simplest low–cost synthesis of Bismuth–Copper oxide (Bi 2 CuO 4 ) with spruce–leaf–like morphology and its applications in supercapacitor devices. Bi (NO 3 ) 3 . 5H 2 O was used as a precursor during an electrodeposition (ED) method to create the spruce–leaf–like Bi 2 CuO 4 electrode. XRD, XPS, FE−SEM, EDX, and TEM were used to characterize the structures and morphologies of the synthesized materials, while CV, CP, and EIS were used to determine their electrochemical characteristics. The Bi 2 CuO 4 phase was confirmed by XRD patterns, and electrochemical testing demonstrated that the material had better rate capability and an SC of 431.2 F/g at a scan rate of 2 mV/s. After 5,000 cycles, it retained 81.4 % of its energy. Additionally, the maximum SC that was attained by the created asymmetric solid–state device ASSD (Bi 0.6 V ǀǀ1 M PVA−KOHǀǀAC) was 73.7 F/g. The energy density was 55.3 Wh/Kg at a power density of 4570 W/Kg. The exceptional electrochemical performance of Bi 2 CuO 4 thin film electrodes recommends it has a promising material.