Demonstration of low forward voltage InGaN-based red LEDs
Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez‐Rizo, Kazuhiro Ohkawa
Abstract
Abstract Here we report InGaN-based red light-emitting diodes (LEDs) grown on ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo stretchy="true">¯</mml:mo> </mml:mover> <mml:mn>01</mml:mn> </mml:math> ) β -Ga 2 O 3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.