III-nitride-based monolithic integration: From electronics to photonics
Yijian Song, Rui He, Junxue Ran, Junxi Wang, Jinmin Li, Tongbo Wei
Abstract
Over the past two decades, the successful growth of high-quality wide-bandgap III-nitrides has made the realization of a broad range of new device applications, including optoelectronic and microelectronic fields. Through monolithic integration of photonic and electronic devices simultaneously, different functional modules can be integrated on the same wafer, eliminating parasitic effects caused by redundant external components, enhancing system robustness and saving chip area. The scalable integrated circuits have the great potential for optoelectronic hybrid integration. This paper reviews the latest research progress in the monolithic integration of III-nitride devices in optoelectronics and microelectronics in recent years, especially the system integration of gallium nitride-based light emitting diodes, laser diodes, and high-electron-mobility transistors. We further analyze the development status and challenges of photonic integrated circuits and power monolithic integrated circuits from the perspectives of process fabrication and device structure. The applications of III-nitride monolithic integrated systems are presented in detail, including sensing and on-chip optical communication. Finally, we summarize the current state of development, opportunities, and challenges in III-nitride monolithic integration, providing insights into the advancement of wide-bandgap semiconductors in the post-Moore's law era.