Dual-field plated β-Ga<sub>2</sub>O<sub>3</sub> nano-FETs with an off-state breakdown voltage exceeding 400 V
Jinho Bae, Hyoung Woo Kim, In Ho Kang, Jihyun Kim
Abstract
The introduction of multiple field-modulating plates into ultra-wide bandgap nano-FETs greatly increased the voltage swings to over 400 V.
Topics & Concepts
Materials scienceNano-Breakdown voltageOptoelectronicsVoltageField (mathematics)Band gapElectrical engineeringComposite materialEngineeringMathematicsPure mathematicsGa2O3 and related materialsZnO doping and propertiesSemiconductor materials and devices