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Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Xueqiang Ji, Jianying Yue, Xiaohui Qi, Zuyong Yan, Shan Li, Chao Lu, Zhitong Li, Zeng Liu, Qi Song, Xu Yan, Jinjin Wang, Shuang Wang, Peigang Li, Weihua Tang, Peigang Li, Weihua Tang

2023Vacuum21 citationsDOI

Topics & Concepts

Materials scienceMetalorganic vapour phase epitaxyDopingOptoelectronicsChemical vapor depositionEpitaxyGalliumCrystal (programming language)DiodeAnalytical Chemistry (journal)NanotechnologyChemistryChromatographyMetallurgyProgramming languageComputer scienceLayer (electronics)Ga2O3 and related materialsZnO doping and propertiesAdvanced Photocatalysis Techniques
Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties | Litcius