Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches
Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas, J. J. Palacios, Francisco G. Ruiz, A. Godoy, Mohit D. Ganeriwala
Abstract
and those with mono-sulfur vacancies, aiming to understand the key elements that affect the switching performance of memristors. Furthermore, transport simulations are carried out to evaluate the effects of GBs on both out-of-plane and in-plane electron conductance, providing valuable insights into the resistive switching ratio.
Topics & Concepts
Grain boundaryProtein filamentMaterials scienceAtom (system on chip)Resistive random-access memoryResistive touchscreenMetalMemristorCondensed matter physicsChemical physicsOptoelectronicsComposite materialChemistryElectronic engineeringMetallurgyElectrical engineeringMicrostructurePhysicsElectrodeEngineeringPhysical chemistryEmbedded systemAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesMXene and MAX Phase Materials