Demonstration of ultra-small 5 × 5 <i>μ</i>m2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2%
Panpan Li, Hongjian Li, Yunxuan Yang, Haojun Zhang, Pavel Shapturenka, Matthew S. Wong, Cheyenne Lynsky, Mike Iza, Michael J. Gordon, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Abstract
Red micro-size light-emitting diodes (μLEDs) less than 10 × 10 μm2 are crucial for augmented reality (AR) and virtual reality (VR) applications. However, they remain very challenging since the common AlInGaP red μLEDs with such small size suffer from a dramatic reduction in the external quantum efficiency. In this work, we demonstrate ultra-small 5 × 5 μm2 607 nm amber μLEDs using InGaN materials, which show an EQE over 2% and an ultra-low reverse current of 10−9 A at −5 V. This demonstration suggests promising results of ultra-small InGaN μLEDs for AR and VR displays.