Oxygen vacancy and grain boundary resistance regulate the intrinsic ferroelectric properties of Bi0.96Sr0.04Fe0.98−xMnxCo0.02O3 thin film
Xixi Ren, Guoqiang Tan, Yun Liu, Jincheng Li, Mintao Xue, Huijun Ren, Ao Xia, Wenlong Liu, Yun Liu
Topics & Concepts
Materials scienceFerroelectricityGrain boundaryPolarization (electrochemistry)Electric fieldOxygenThin filmDopingCondensed matter physicsNanotechnologyOptoelectronicsComposite materialDielectricMicrostructureChemistryPhysical chemistryQuantum mechanicsOrganic chemistryPhysicsMultiferroics and related materialsFerroelectric and Piezoelectric MaterialsMagnetic and transport properties of perovskites and related materials