A Novel 19$\sqrt {19} $ × 19$\sqrt {19} $ Superstructure in Epitaxially Grown 1T‐TaTe<sub>2</sub>
Jinwoong Hwang, Yeongrok Jin, Canxun Zhang, Tiancong Zhu, Kyoo Kim, Yong Zhong, Ji‐Eun Lee, Zongqi Shen, Zongqi Shen, Yi Chen, Wei Ruan, Hyejin Ryu, Choongyu Hwang, Jaekwang Lee, Michael F. Crommie, Sung‐Kwan Mo, Zhi‐Xun Shen, Zhi‐Xun Shen
Abstract
Abstract The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel × charge order in few‐layer‐thick 1T‐TaTe 2 transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized, is report. The photoemission and scanning probe measurements demonstrate that monolayer 1T‐TaTe 2 exhibits a variety of metastable charge density wave orders, including the × superstructure, which can be selectively stabilized by controlling the post‐growth annealing temperature. Moreover, it is found that only the × order persists in 1T‐TaTe 2 films thicker than a monolayer, up to 8 layers. The findings identify the previously unrealized novel electronic order in a much‐studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.