Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits
Yu Fei Pan, Tao Jian, Pingfan Gu, Yiwen Song, Qi Wang, Bo Han, Yuqia Ran, Zemin Pan, Yanping Li, Wanjin Xu, Peng Gao, Chendong Zhang, Jun He, Xiaolong Xu, Yu Ye
Abstract
The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology. The fabrication of n- and p-type semiconducting channels based on the same layered material would simplify the implementation of 2D electronics. Here, the authors report a spatially selective doping method for the synthesis of wafer-scale p- and n-type 2H-MoTe2 thin films, and their application for the realization of complementary 2D transistor and inverter arrays.