Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects
R. A. Wells, Alex W. Robertson
Abstract
Abstract In the last 15 years memristors have been investigated as devices for high‐density, low‐power, non‐volatile, resistive random access memory (ReRAM) beyond Moore's law. They also show potential in neuromorphic logic architectures to overcome the Von–Neumann bottleneck of classical circuitry facilitating better hardware for artificial intelligence (AI) and artificial neural network (ANN) systems. Molybdenum disulfide (MoS 2 ) has emerged as a promising material for memristor devices of monolayer thickness due to its direct bandgap, high carrier mobility and environmental stability. In this review, recent progress in the development of MoS 2 memristors the current understanding of the mechanisms behind their function are examined. The remaining obstacles to a commercially viable device principle and how these may be surmounted in light of the rapid progress that has already been made are also discussed.