Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices
Hyeonseung Ji, Yoon‐Seok Lee, Jungang Heo, Sungjun Kim
Topics & Concepts
BilayerResistive random-access memoryNeuromorphic engineeringMaterials scienceOptoelectronicsLayer (electronics)TinElectrodeComposite materialChemistryComputer scienceMembranePhysical chemistryBiochemistryArtificial neural networkMachine learningMetallurgyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials