Ultra-low density and high performance InAs quantum dot single photon emitters
Chen Shang, Marco De Gregorio, Quirin Buchinger, Moritz Meinecke, Peter Gschwandtner, Andreas Pfenning, Tobias Huber, Sven Höfling, John E. Bowers
Abstract
We report the development of high quality InAs quantum dots with an ultra-low density of 2 × 107 cm−2 on (001) GaAs substrates. A significant reduction in the emission wavelength inhomogeneity has been observed. A representative dot has been characterized under cryogenic temperatures, demonstrating a close-to-ideal antibunching of both the exciton and biexciton emissions with a fitted g(2)(0) = 0.008 and 0.059, respectively.
Topics & Concepts
Quantum dotBiexcitonExcitonOptoelectronicsWavelengthPhotonMaterials scienceQuality (philosophy)Single-photon sourcePhysicsAtomic physicsCondensed matter physicsMolecular physicsOpticsQuantum mechanicsSemiconductor Quantum Structures and DevicesQuantum Information and CryptographyNanowire Synthesis and Applications